Single Crystal Germanium Wafer / Ingot Featured Image

Otu Crystal Germanium Wafer / Ingot

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Otu Crystal Germanium Wafer/Ingotma ọ bụ monocrystalline germanium bụ ọla ọcha agba ntụ, agba agbaze 937 ° C, njupụta 5.33 g / cm³.Germanium kristal na-agbaji agbaji ma nwee obere plastik na okpomọkụ ụlọ.A na-enweta germanium dị ọcha dị elu site na mpaghara na-ese n'elu mmiri na doped na indium na gallium ma ọ bụ antimony iji nweta n-ụdị ma ọ bụ p-ụdị conductivity, nke nwere elu eletrọn agagharị na oghere oghere dị elu, ma nwee ike ikpo ọkụ eletrik maka mgbochi fogging ma ọ bụ mgbochi icing. ngwa.Otu Crystal Germanium na-etolite site na teknụzụ Vertical Gradient Freeze VGF iji hụ na nkwụsi ike kemịkalụ, nguzogide corrosion, nnyefe dị mma, ndenye ntugharị dị elu na ogo zuru oke nke lattice.

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Otu Crystal Germanium na-achọta ngwa na-ekwe nkwa na nke sara mbara, nke a na-eji akara eletrọnịkị maka diodes na transistor, Infrared ma ọ bụ ngwa anya germanium oghere ma ọ bụ windo bụ maka windo anya IR ma ọ bụ diski, ngwa anya na-eji na ọhụụ abalị na thermographic ihe ngwọta maka nchekwa, nlele okpomọkụ dịpụrụ adịpụ, ọgụ ọkụ na akụrụngwa nlekota ụlọ ọrụ, obere doped P na N ụdị Germanium wafer nwekwara ike iji maka nnwale mmetụta Ụlọ Nzukọ.Ọkwa cell bụ maka ihe eji eme ihe na sel anyanwụ nke III-V ugboro atọ yana maka sistemụ PV siri ike nke mkpụrụ ndụ anyanwụ wdg.

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Otu Crystal Germanium

Otu Crystal Germanium Wafer ma ọ bụ Ingotnwere n-ụdị, p-ụdị na un-doped conductivity na nghazi <100> na Western Minmetals (SC) Corporation nwere ike nyefee na nha nke 2, 3, 4 na 6 inch dayameta (50mm, 75mm, 100mm na 150mm) na Imecha elu nke etched ma ọ bụ nke a na-egbu maramara na ngwugwu nke igbe ụfụfụ ma ọ bụ cassette maka wafer yana na akpa rọba mechiri emechi maka ingot na igbe katọn n'èzí, polycrystalline germanium ingot dịkwa na arịrịọ, ma ọ bụ dị ka nkọwa ahaziri iji nweta azịza zuru oke.

Akara	Ge
Nọmba Atọmic	32
Atọmk Ibu	72.63
Otu n'ime ihe	Metalloid
Otu, Oge, Mgbochi	14, 4, P
Ọdịdị kristal	diamond
Agba	Agba ọcha
Ebe Na-agbaze	937°C, 1211.40K
Ebe esi nri	2833°C, 3106K
Njupụta na 300K	5.323 g/cm³
Resistivity dị n'ime	46 Ω-cm
Nọmba CAS	7440-56-4
Nọmba EC	231-164-3

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Germanium Wafer	2"	3"	4"	6"
2	Dayameta mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Uzo uto	VGF ma ọ bụ CZ	VGF ma ọ bụ CZ	VGF ma ọ bụ CZ	VGF ma ọ bụ CZ
4	Omume omume	P-ụdị / doped (Ga ma ọ bụ In), N-ụdị/ doped Sb, Un-doped
5	Nhazi	(100) ± 0.5°	(100) ± 0.5°	(100) ± 0.5°	(100) ± 0.5°
6	Ọkpụrụkpụ μm	145, 175, (500-1000)
7	Nguzogide Ω-cm	0.001-50	0.001-50	0.001-50	0.001-50
8	Mbugharị cm2/Vs	>200	>200	>200	>200
9	TTV μm max	5, 8, 10	5, 8, 10	5, 8, 10	5, 8, 10
10	Ụta μm max	15	15	15	15
11	Warp μm max	15	15	15	15
12	Ntughari cm-2 max	300	300	300	300
13	EPD cm-2	<4000	<4000	<4000	<4000
14	Ọnụọgụ agụta a/wafer max	10 (na ≥0.5μm)	10 (na ≥0.5μm)	10 (na ≥0.5μm)	10 (na ≥0.5μm)
15	Emecha elu elu	P/E, P/P ma ọ bụ dị ka achọrọ
16	Nkwakọ ngwaahịa	Otu akpa wafer ma ọ bụ cassette n'ime, igbe katọn n'èzí

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Germanium Ingot	2"	3"	4"	6"
2	Ụdị	P-ụdị / doped (Ga, In), N-ụdị / doped (Dịka, Sb), Un-doped
3	Nguzogide Ω-cm	0.1-50	0.1-50	0.1-50	0.1-50
4	Carrier Lifetime μs	80-600	80-600	80-600	80-600
5	Ogologo Ingot mm	140-300	140-300	140-300	140-300
6	Nkwakọ ngwaahịa	Ejiri ya n'ime akpa rọba ma ọ bụ igbe ụfụfụ n'ime, igbe katọn n'èzí
7	kwuo	Polycrystalline germanium ingot dị mgbe a rịọrọ ya

Otu Crystal Germaniumna-achọta ngwa na-ekwe nkwa na nke sara mbara, nke a na-eji akara eletrọnịkị maka diodes na transistor, Infrared ma ọ bụ ngwa anya germanium oghere ma ọ bụ windo bụ maka windo anya IR ma ọ bụ diski, ngwa anya na-eji na ọhụụ abalị na thermographic ihe ngwọta maka nchekwa, nlele okpomọkụ dịpụrụ adịpụ, ọgụ ọkụ na akụrụngwa nlekota ụlọ ọrụ, obere doped P na N ụdị Germanium wafer nwekwara ike iji maka nnwale mmetụta Ụlọ Nzukọ.Ọkwa cell bụ maka ihe eji eme ihe na sel anyanwụ nke III-V ugboro atọ yana maka sistemụ PV siri ike nke mkpụrụ ndụ anyanwụ wdg.