Gallium Phosphide GaP

Nkọwa

Gallium Phosphide GaP, ihe dị mkpa semiconductor nke ihe eletrik pụrụ iche dị ka ihe ndị ọzọ na-emepụta ihe nke III-V, na-eme ka ọ dị n'ime usoro cubic ZB na-ekpo ọkụ, bụ ihe na-acha odo odo-acha odo odo nke kristal nwere oghere na-apụtaghị ìhè nke 2.26 eV (300K), nke bụ arụpụtara site na 6N 7N nnukwu ịdị ọcha gallium na phosphorus, wee bụrụ otu kristal site na teknụzụ Liquid Encapsulated Czochralski (LEC).Gallium phosphide crystal bụ doped sọlfọ ma ọ bụ tellurium iji nweta n-ụdị semiconductor, na zinc doped dị ka p-ụdị conductivity maka ịga n'ihu na-emepụta n'ime wafer chọrọ, nke nwere ngwa na ngwa anya, eletrọnịkị na ngwaọrụ optoelectronics ndị ọzọ.Enwere ike ịkwadebe otu Crystal GaP wafer Epi-Njikere maka ngwa LPE gị, MOCVD na MBE epitaxial.Enwere ike ịnye otu kristal Gallium phosphide GaP wafer p-ụdị, ụdị n-ụdị ma ọ bụ ihe na-adịghị mma na Western Minmetals (SC) Corporation na nha nke 2 ″ na 3” (50mm, 75mm dayameta), nghazi <100>, <111 > na n'elu imecha nke dị ka-ebipụ, polished ma ọ bụ epi-njikere usoro.

Ngwa

Site na arụ ọrụ dị ugbu a dị elu na nke dị elu na mgbanye ọkụ, Gallium phosphide GaP wafer dabara maka sistemụ ngosipụta anya dị ka diodes na-acha ọbara ọbara dị ọnụ ala, oroma na akwụkwọ ndụ akwụkwọ ndụ (LED) na ọkụ azụ nke LCD na-acha odo odo na akwụkwọ ndụ akwụkwọ ndụ wdg na ibe LED na-arụpụta ya. Nchapụta dị ala na nke ọkara, GaP na-anakwere n'ọtụtụ ebe dị ka ihe bụ isi maka sensọ infrared na nleba anya n'ichepụta igwefoto.

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Gallium Phosphide GaP

Enwere ike ịnye otu kristal Gallium Phosphide GaP wafer ma ọ bụ ụdị p-ụdị, ụdị n-ụdị ma ọ bụ ihe na-adịghị mma na Western Minmetals (SC) Corporation na nha 2 ″ na 3” (50mm, 75mm) na dayameta, nghazi <100> , <111> na elu imecha nke dị ka-ebipụ, lapped, etched, polished, epi-njikere esichara na otu wafer akpa akara na aluminum mejupụtara akpa ma ọ bụ dị ka ahaziri nkọwapụta zuru okè ngwọta.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Nha GaP	2"
2	Dayameta mm	50.8 ± 0,5
3	Uzo uto	LEC
4	Ụdị omume	P-ụdị/Zn-doped, N-ụdị/(S, Si, Te) -doped, Un-doped
5	Nhazi	<1 1 1> ± 0.5°
6	Ọkpụrụkpụ μm	(300-400) ± 20
7	Nguzogide Ω-cm	0.003-0.3
8	Nhazi Flat (OF) mm	16±1
9	Flat njirimara (Ọ BỤRỤ) mm	8±1
10	Mbugharị Ụlọ Nzukọ cm2/Vs min	100
11	Ihe nleba anya nke ụgbọelu cm^-3	(2-20) E17
12	Njupụta cm^-2max	2.00E+05
13	Emecha elu elu	P/E, P/P
14	Nkwakọ ngwaahịa	Otu akpa wafer nke etinyere na akpa ihe mejupụtara aluminom, igbe katọn n'èzí

Usoro usoro	GaP
Ibu molekụla	100.7
Ọdịdị kristal	Zinc ngwakọta
Ọdịdị	Orange siri ike
Ebe Na-agbaze	N/A
Ebe esi nri	N/A
Njupụta na 300K	4.14 g/cm³
Oghere ike	2.26 eV
Resistivity dị n'ime	N/A
Nọmba CAS	12063-98-8
Nọmba EC	235-057-2

Gallium phosphide gaP Wafer, na ala ugbu a na elu arụmọrụ na ìhè emitting, adabara ngwa anya ngosi usoro dị ka ọnụ ala red, oroma, na green ìhè-emitting diodes (LEDs) na backlight nke edo edo na green LCD wdg na LED ibe n'ichepụta na ala na-ajụ. ihie, GaP na-anabatakwa ebe niile dị ka ihe bụ isi maka sensọ infrared na nleba anya n'ichepụta igwefoto.