Ọnụ ego nke Indium Phosphide InP

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Ọnụ ego nke Indium Phosphide InP,CAS No.22398-80-7, ebe mgbaze 1600 ° C, ọnụọgụ abụọ compound semiconductor nke ezinụlọ III-V, usoro kristal cubic "zinc blende" na-adabere na ihu, nke yiri ọtụtụ n'ime semiconductor III-V, sitere na. 6N 7N elu ịdị ọcha indium na phosphorus element, wee bụrụ otu kristal site na usoro LEC ma ọ bụ VGF.Indium phosphide kristal na-doped ka ọ bụrụ n-ụdị, p-ụdị ma ọ bụ ọkara insulating conductivity maka n'ihu wafer nrụpụta ruo 6 ″ (150 mm) dayameta, nke na-egosipụta ọdịiche nke band ya kpọmkwem, elu elu ngagharị nke electrons na oghere na nke ọma thermal. conductivity.Enwere ike ịnye Indium Phosphide InP Wafer prime ma ọ bụ akara ule na Western Minmetals (SC) Corporation na ụdị p-ụdị, n-ụdị na ọkara mkpuchi ihe n'ogo nke 2" 3" 4" na 6" (ruo 150mm) dayameta, nghazi <111> ma ọ bụ <100> na ọkpụrụkpụ 350-625um na elu imecha nke etched na polished ma ọ bụ Epi-njikere usoro.Ka ọ dị ugbu a Indium Phosphide Single Crystal ingot 2-6 ″ dị mgbe a rịọrọ ya.Polycrystalline Indium Phosphide InP ma ọ bụ Multi-crystal InP ingot n'ogo nke D(60-75) x Ogologo (180-400) mm nke 2.5-6.0kg yana ntinye ntinye nke na-erughị 6E15 ma ọ bụ 6E15-3E16 dịkwa.Nkọwa ọ bụla ahaziri ahazi dị mgbe a rịọrọ ya iji nweta ngwọta zuru oke.

Ngwa

A na-eji Indium Phosphide InP wafer eme ihe n'ọtụtụ ebe maka imepụta akụrụngwa optoelectronic, ike dị elu na ngwa elektrọnik dị elu, dị ka mkpụrụ maka epitaxial indium-gallium-arsenide (InGaAs) dabere na ngwaọrụ opto-electronic.Indium Phosphide nọkwa n'ichepụta maka isi iyi ọkụ na-ekwe nkwa nke ukwuu na nkwukọrịta fiber optic, ngwaọrụ isi iyi microwave, amplifiers microwave na ngwaọrụ FETs ọnụ ụzọ, modulators dị elu na ihe nchọpụta foto, na satịlaịtị igodo na ihe ndị ọzọ.

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Ọnụ ego nke Indium Phosphide InP

Indium phosphide otu kristalEnwere ike ịnye Wafer (InP crystal ingot ma ọ bụ Wafer) na Western Minmetals (SC) Corporation na ụdị p-ụdị, n-ụdị na ọkara mkpuchi ihe n'ogo nke 2" 3" 4" na 6" (ruo 150mm) dayameta, nghazi <111> ma ọ bụ <100> na ọkpụrụkpụ 350-625um na elu imecha nke etched na polished ma ọ bụ Epi-njikere usoro.

Indium phosphide Polycrystallinema ọ bụ Multi-Crystal ingot (InP poly ingot) n'ogo nke D (60-75) x L (180-400) mm nke 2.5-6.0kg nwere ntinye uche nke na-erughị 6E15 ma ọ bụ 6E15-3E16 dị.Nkọwa ọ bụla ahaziri ahazi dị mgbe a rịọrọ ya iji nweta ngwọta zuru oke.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Indium phosphide otu kristal	2"	3"	4"
2	Dayameta mm	50.8±0.5	76.2 ± 0.5	100±0.5
3	Uzo uto	VGF	VGF	VGF
4	Omume omume	P/Zn-doped, N/(S-doped ma ọ bụ un-doped), Semi-insulating
5	Nhazi	(100)±0.5°, (111)±0.5°
6	Ọkpụrụkpụ μm	350± 25	600± 25	600± 25
7	Nhazi Flat mm	16±2	22±1	32.5±1
8	Nchọpụta Flat mm	8±1	11 ± 1	18±1
9	Mbugharị cm2/Vs	50-70,>2000, (1.5-4)E3
10	Ntụnye ihe nleba anya cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Ụta μm max	10	10	10
13	Warp μm max	15	15	15
14	Njupụta njupụta cm-2 max	500	1000	2000
15	Emecha elu elu	P/E, P/P	P/E, P/P	P/E, P/P
16	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa ihe mejupụtara aluminom.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Indium Phosphide Ingot	Poly-Crystalline ma ọ bụ Multi-Crystal Ingot
2	Nha kristal	D (60-75) x L (180-400) mm
3	Ibu kwa Crystal Ingot	2.5-6.0kg
4	Mbugharị	≥3500 cm²/VS
5	Ntinye uche nke ebu	≤6E15, ma ọ bụ 6E15-3E16 cm^-3
6	Nkwakọ ngwaahịa	Ingot kristal InP ọ bụla dị n'ime akpa rọba akara, 2-3 ingots n'otu igbe katọn.

Usoro usoro	InP
Ibu molekụla	145.79
Ọdịdị kristal	Zinc ngwakọta
Ọdịdị	Crystalline
Ebe Na-agbaze	1062°C
Ebe esi nri	N/A
Njupụta na 300K	4.81g/cm³
Oghere ike	1.344 eV
Resistivity dị n'ime	8.6E7 Ω-cm
Nọmba CAS	22398-80-7
Nọmba EC	244-959-5

Indium Phosphide InP WaferA na-eji ya eme ihe maka imepụta akụrụngwa optoelectronic, ike dị elu na ngwa eletrọnịkị dị elu, dị ka mkpụrụ maka epitaxial indium-gallium-arsenide (InGaAs) dabere na ngwaọrụ opto-electronic.Indium Phosphide nọkwa n'ichepụta maka isi iyi ọkụ na-ekwe nkwa nke ukwuu na nkwukọrịta fiber optic, ngwaọrụ isi iyi microwave, amplifiers microwave na ngwaọrụ FETs ọnụ ụzọ, modulators dị elu na ihe nchọpụta foto, na satịlaịtị igodo na ihe ndị ọzọ.