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Gallium Nitride GaN

Nkọwa

Gallium Nitride GaN, CAS 25617-97-4, molecular uka 83.73, wurtzite crystal Ọdịdị, bụ ọnụọgụ abụọ compound kpọmkwem band-ọpụ semiconductor nke otu III-V toro site a ukwuu mepụtara ammonothermal usoro usoro.Ejiri njirimara kristal zuru oke, nrụpụta ọkụ dị elu, ngagharị elektrọn dị elu, mpaghara eletrik dị oke egwu na bandgap sara mbara, Gallium Nitride GaN nwere njirimara a na-achọsi ike na optoelectronics na ngwa nghọta.

Ngwa

Gallium Nitride GaN dabara maka mmepụta nke oke oke ọsọ na ikike dị elu na-enwu ọkụ na-emitting diodes LEDs components, laser na optoelectronics dị ka akwụkwọ ndụ akwụkwọ ndụ na-acha anụnụ anụnụ, ngwaahịa transistor elektrọn dị elu (HEMTs) yana ike dị elu. na ụlọ ọrụ nrụpụta ngwaọrụ dị elu.

Nnyefe

Enwere ike ịnye Gallium Nitride GaN na Western Minmetals (SC) Corporation n'ogo nke okirikiri wafer 2 inch ma ọ bụ 4 ”(50mm, 100mm) na wafer square 10 × 10 ma ọ bụ 10 × 5 mm.Ọ bụla ahaziri nha na nkọwapụta bụ maka zuru okè ngwọta na anyị ahịa n'ụwa nile.


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Nkọwa nka nka

Gallium Nitride GaN

GaN-W3

Gallium Nitride GaNna Western Minmetals (SC) Corporation nwere ike inye na size nke okirikiri wafer 2 inch "ma ọ bụ 4" (50mm, 100mm) na square wafer 10 × 10 ma ọ bụ 10 × 5 mm.Ọ bụla ahaziri nha na nkọwapụta bụ maka zuru okè ngwọta na anyị ahịa n'ụwa nile.

Mba. Ihe Nkọwa ọkọlọtọ
1 Ụdị okirikiri okirikiri Square
2 Nha 2" 4" --
3 Dayameta mm 50.8±0.5 100±0.5 --
4 Ogologo akụkụ mm -- -- 10x10 ma ọ bụ 10x5
5 Uzo uto HVPE HVPE HVPE
6 Nhazi Ụgbọ elu C (0001) Ụgbọ elu C (0001) Ụgbọ elu C (0001)
7 Ụdị omume N-ụdị/Si-doped, Un-doped, Semi-insulating
8 Nguzogide Ω-cm <0.1, <0.05,>1E6
9 Ọkpụrụkpụ μm 350± 25 350± 25 350± 25
10 TTV μm max 15 15 15
11 Ụta μm max 20 20 20
12 EPD cm-2 <5E8 <5E8 <5E8
13 Emecha elu elu P/E, P/P P/E, P/P P/E, P/P
14 Ọdịdị dị n'elu N'ihu: ≤0.2nm, Azụ: 0.5-1.5μm ma ọ bụ ≤0.2nm
15 Nkwakọ ngwaahịa Otu akpa wafer agbachiri n'ime akpa Aluminom.
Usoro usoro GaN
Ibu molekụla 83.73
Ọdịdị kristal Zinc blende/Wurtzite
Ọdịdị siri ike translucent
Ebe Na-agbaze 2500 Celsius C
Ebe esi nri N/A
Njupụta na 300K 6.15 g/cm3
Oghere ike (3.2-3.29) eV na 300K
Resistivity dị n'ime > 1E8 Ω-cm
Nọmba CAS 25617-97-4
Nọmba EC 247-129-0

Gallium Nitride GaNdabara adaba maka mmepụta nke oke ọnụ dị elu na ikike dị elu na-egbuke egbuke-emitting diodes LEDs components, laser na optoelectronics dị ka akwụkwọ ndụ akwụkwọ ndụ na-acha anụnụ anụnụ lasers, elu electron mobility transistors (HEMTs) ngwaahịa na na elu-ike na elu- ụlọ ọrụ nrụpụta ngwaọrụ okpomọkụ.

GaN-W1

GaN-W2

InP-W4

s12

PC-20

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Gallium Nitride GaN


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