Ọnụ ego nke Gallium Arsenide

Nkọwa

Gallium ArsenideGaAs bụ a kpọmkwem band gap compound semiconductor nke otu III-V synthesized ma ọ dịkarịa ala 6N 7N elu ịdị ọcha gallium na arsenic element, na toro crystal site VGF ma ọ bụ LEC usoro si elu ịdị ọcha polycrystalline gallium arsenide, isi awọ ọdịdị, cubic kristal na zinc- ngwakọta Ọdịdị.Site na doping nke carbon, silicon, tellurium ma ọ bụ zinc iji nweta n-ụdị ma ọ bụ p-ụdị na ọkara insulating conductivity n'otu n'otu, a cylindrical InAs crystal nwere ike sliced na chepụta ya n'ime oghere na wafer dị ka-bee, etched, polished ma ọ bụ epi. -dị njikere maka uto epitaxial MBE ma ọ bụ MOCVD.A na-ejikarị Gallium Arsenide wafer emepụta ngwaọrụ eletrọnịkị dị ka diodes infrared light-emitting diodes, laser diodes, window optical, transistors mmetụta ubi FETs, linear of digital ICs and solar cell.Ngwa ndị GaA bara uru na ụda redio dị elu yana ngwa ngbanwe eletrọnịkị ngwa ngwa, ngwa nkwalite mgbaama na-adịghị ike.Ọzọkwa, Gallium Arsenide mkpụrụ bụ ihe dị mma maka imepụta akụrụngwa RF, ugboro microwave na monolithic ICs, yana ngwaọrụ LED na nkwukọrịta ngwa anya na sistemụ njikwa maka ngagharị ọnụ ụlọ ya, ike dị elu na nkwụsi ike okpomọkụ.

Nnyefe

Enwere ike ịnye Gallium Arsenide GaAs na Western Minmetals (SC) Corporation dị ka akpụ polycrystalline ma ọ bụ otu wafer kristal dị ka ịkpụ, etched, polished, ma ọ bụ epi-njikere wafers n'ogo nke 2"3" 4" na 6" (50mm, 75mm, 100mm, 150mm) dayameta, na p-ụdị, n-ụdị ma ọ bụ ọkara insulating conductivity, na <111> ma ọ bụ <100> nghazi.Nkọwapụta ahaziri ahaziri bụ maka ngwọta zuru oke nye ndị ahịa anyị n'ụwa niile.

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Gallium Arsenide

GaAs

Ọnụ ego nke Gallium ArsenideA na-ejikarị wafers emepụta ngwaọrụ eletrọnịkị dị ka diodes infrared light-emitting diodes, laser diodes, windows optical, transistors FETs, linear nke IC dijitalụ na sel anyanwụ.Ngwa ndị GaA bara uru na ụda redio dị elu yana ngwa ngbanwe eletrọnịkị ngwa ngwa, ngwa nkwalite mgbaama na-adịghị ike.Ọzọkwa, Gallium Arsenide mkpụrụ bụ ihe dị mma maka imepụta akụrụngwa RF, ugboro microwave na monolithic ICs, yana ngwaọrụ LED na nkwukọrịta ngwa anya na sistemụ njikwa maka ngagharị ọnụ ụlọ ya, ike dị elu na nkwụsi ike okpomọkụ.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Nha	2"	3"	4"	6"
2	Dayameta mm	50.8±0.3	76.2±0.3	100±0.5	150±0.5
3	Uzo uto	VGF	VGF	VGF	VGF
4	Ụdị omume	N-Ụdị/Si ma ọ bụ Te-doped, P-Ụdị/Zn-doped, Semi-Insulating/Un-doped
5	Nhazi	(100) ± 0.5°	(100) ± 0.5°	(100) ± 0.5°	(100) ± 0.5°
6	Ọkpụrụkpụ μm	350± 25	625±25	625±25	650± 25
7	Nhazi Flat mm	17±1	22±1	32±1	Ọkwa
8	Nchọpụta Flat mm	7±1	12±1	18±1	-
9	Nguzogide Ω-cm	(1-9) E (-3) maka ụdị p-ụdị ma ọ bụ n-ụdị, (1-10) E8 maka ọkara mkpuchi.
10	Mbugharị cm2/vs	50-120 maka p-ụdị, (1-2.5) E3 maka n-ụdị, ≥4000 maka ọkara mkpuchi.
11	Ntụnye ihe nleba anya cm-3	(5-50) E18 maka p-ụdị, (0.8-4) E18 maka n-ụdị
12	TTV μm max	10	10	10	10
13	Ụta μm max	30	30	30	30
14	Warp μm max	30	30	30	30
15	EPD cm-2	5000	5000	5000	5000
16	Emecha elu elu	P/E, P/P	P/E, P/P	P/E, P/P	P/E, P/P
17	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa ihe mejupụtara aluminom.
18	Okwu	Ọkwa ọrụ igwe GaAs wafer dịkwa mgbe a rịọrọ ya.

Usoro usoro	GaAs
Ibu molekụla	144.64
Ọdịdị kristal	Zinc ngwakọta
Ọdịdị	Gray crystalline siri ike
Ebe Na-agbaze	1400°C, 2550°F
Ebe esi nri	N/A
Njupụta na 300K	5.32 g/cm³
Oghere ike	1.424 eV
Resistivity dị n'ime	3.3E8 Ω-cm
Nọmba CAS	1303-00-0
Nọmba EC	215-114-8

Ọnụ ego nke Gallium Arsenidena Western Minmetals (SC) Corporation nwere ike ịnye ya dị ka polycrystalline akpụ ma ọ bụ otu kristal wafer dị ka ịkpụ, etched, polished, ma ọ bụ epi-njikere wafers n'ogo nke 2" 3" 4" na 6" (50mm, 75mm, 100mm , 150mm) dayameta, na p-ụdị, n-ụdị ma ọ bụ ọkara insulating conductivity, na <111> ma ọ bụ <100> nghazi.Nkọwapụta ahaziri ahaziri bụ maka ngwọta zuru oke nye ndị ahịa anyị n'ụwa niile.