Silicon Carbide SiC

Nkọwa

Silicon Carbide Wafer SiC, bụ ihe siri ike nke ukwuu, na-emepụta ngwakọta kristal nke silicon na carbon site na usoro MOCVD, ma gosipụta ya.ya pụrụ iche obosara gbalaga ọdịiche na ndị ọzọ mma e ji mara nke ala ọnụọgụ nke thermal mgbasawanye, elu na-arụ ọrụ okpomọkụ, ezi okpomọkụ dissipation, ala ịmafe na conduction ọnwụ, ọzọ ume ịrụ ọrụ nke ọma, elu thermal conductivity na ike eletriki ubi mmebi ike, nakwa dị ka ihe ndọpụ mmiri iyi. ọnọdụ.Silicon Carbide SiC na Western Minmetals (SC) Corporation nwere ike ịnye n'ogo nke 2" 3' 4" na 6" (50mm, 75mm, 100mm, 150mm) dayameta, yana ụdị n-ụdị, mkpuchi mkpuchi ma ọ bụ dummy wafer maka ụlọ ọrụ mmepụta ihe. na laabu ngwa.Ihe ọ bụla ahaziri nkọwa bụ maka zuru okè ngwọta na anyị ahịa n'ụwa nile.

Ngwa

4H / 6H Silicon Carbide SiC wafer dị elu zuru oke maka ịmepụta ọtụtụ ngwa ngwa ngwa ngwa, okpomọkụ dị elu & ngwa eletrik dị elu dị ka Schottky diodes & SBD, MOSFETs & JFETs na-agbanwe ike, wdg. bụkwa ihe a na-achọsi ike na nyocha & mmepe nke transistors bipolar bipolar na thyristors nwere mkpuchi.Dị ka ihe pụrụ iche nke ọgbọ ọhụrụ semiconducting, Silicon Carbide SiC wafer na-ejekwa ozi dị ka onye na-ekesa ọkụ na-arụ ọrụ nke ọma na akụrụngwa LEDs dị elu, ma ọ bụ dị ka ihe kwụsiri ike ma na-ewu ewu maka ịmepụta GaN oyi akwa na-akwado nyocha sayensị ezubere iche n'ọdịnihu.

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Silicon Carbide SiC

Silicon Carbide SiCna Western Minmetals (SC) Corporation nwere ike inye na nha nke 2" 3' 4" na 6" (50mm, 75mm, 100mm, 150mm) dayameta, na n-ụdị, ọkara mkpuchi ma ọ bụ dummy wafer maka ụlọ ọrụ mmepụta ihe na ngwa ụlọ nyocha. Nkọwa ọ bụla ahaziri ahaziri bụ maka ngwọta zuru oke nye ndị ahịa anyị n'ụwa niile.

Usoro usoro	SiC
Ibu molekụla	40.1
Ọdịdị kristal	Wurtzite
Ọdịdị	siri ike
Ebe Na-agbaze	3103±40K
Ebe esi nri	N/A
Njupụta na 300K	3.21 g/cm³
Oghere ike	(3.00-3.23) eV
Resistivity dị n'ime	> 1E5 Ω-cm
Nọmba CAS	409-21-2
Nọmba EC	206-991-8

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Nha SiC	2"	3"	4"	6"
2	Dayameta mm	50.8 0,38	76.2 0.38	1000.5	1500.5
3	Uzo uto	MOCVD	MOCVD	MOCVD	MOCVD
4	Ụdị omume	4H-N, 6H-N, 4H-SI, 6H-SI
5	Nguzogide Ω-cm	0.015-0.028;0.02-0.1;> 1E5
6	Nhazi	0°±0.5°;4.0° kwupụta <1120>
7	Ọkpụrụkpụ μm	330± 25	330± 25	(350-500)±25	(350-500)±25
8	Ebe Flat nke izizi	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Ogologo Flat nke isi mm	16 ± 1.7	22.2 ± 3.2	32.5±2	47.5±2.5
10	Ebe ewepụghị ụlọ nke abụọ	Silicon na-eche ihu elu: 90°, n'akụkụ elekere site na nnukwu flat ± 5.0°
11	Ogologo Flat nke abụọ mm	8 ± 1.7	11.2 ± 1.5	18±2	22± 2.5
12	TTV μm max	15	15	15	15
13	Ụta μm max	40	40	40	40
14	Warp μm max	60	60	60	60
15	Mwepu ihu mm max	1	2	3	3
16	Njupụta Micropipe cm-2	<5, ụlọ ọrụ mmepụta ihe;<15, ụlọ nyocha;<50, mma
17	Mwepu cm-2	<3000, ụlọ ọrụ mmepụta ihe;<20000, ụlọ nyocha;<500000, nke ukwuu
18	Mkpebi dị elu nm max	1 (Kpụrụ), 0.5 (CMP)
19	Mgbawa	Ọ dịghị, maka ụlọ ọrụ mmepụta ihe
20	Efere Hexagon	Ọ dịghị, maka ụlọ ọrụ mmepụta ihe
21	Ọkpụkpụ	≤3mm, ngụkọta ogologo erughị mkpụrụ dayameta
22	ibe ibe	Ọ dịghị, maka ụlọ ọrụ mmepụta ihe
23	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa ihe mejupụtara aluminom.

Silicon Carbide SiC 4H/6Helu mma wafer bụ zuru okè maka n'ichepụta nke ọtụtụ ọnwụ-ọnụ elu ngwa ngwa, elu okpomọkụ & elu-voltaji ngwá electronic dị ka Schottky diodes & SBD, elu ike ịmafe MOSFETs & JFETs, wdg Ọ bụkwa ihe na-achọsi ike na ihe onwunwe. nyocha & mmepe nke insulated-gate bipolar transistors na thyristors.Dị ka ihe pụrụ iche nke ọgbọ ọhụrụ semiconducting, Silicon Carbide SiC wafer na-ejekwa ozi dị ka onye na-ekesa ọkụ na-arụ ọrụ nke ọma na akụrụngwa LEDs dị elu, ma ọ bụ dị ka ihe kwụsiri ike ma na-ewu ewu maka ịmepụta GaN oyi akwa na-akwado nyocha sayensị ezubere iche n'ọdịnihu.