Indium Arsenide InAs

Nkọwa

Indium arsenide InAs kristal bụ semiconductor mejupụtara nke otu III-V mebere ma ọ dịkarịa ala 6N 7N ọcha Indium na Arsenic element na otu kristal toro site na VGF ma ọ bụ Liquid Encapsulated Czochralski (LEC), ọdịdị agba ntụ ntụ, kristal cubic nwere usoro zinc-blende. , ebe mgbaze nke 942 °C.Indium arsenide band gap bụ mgbanwe ozugbo na gallium arsenide, yana obosara mmachibido iwu bụ 0.45eV (300K).InAs kristal nwere oke nha nke parampat eletriki, lattice mgbe niile, ngagharị elektrọn dị elu yana njupụta ntụpọ dị ala.Enwere ike ịkpụ kristal cylindrical InAs nke VGF ma ọ bụ LEC toro n'ime wafer dị ka ịkpụ, etched, chara acha ma ọ bụ nke dị njikere maka MBE ma ọ bụ MOCVD epitaxial ito.

Ngwa

Indium arsenide crystal wafer bụ nnukwu mkpụrụ maka ịme ngwaọrụ Halllọ Nzukọ na ihe mmetụta magnetik maka ngagharị ụlọ ya kacha elu mana bandgap ike dị warara, ihe dị mma maka iwu ihe nchọta infrared nwere oke ogologo nke 1-3.8 µm ejiri na ngwa ike dị elu. n'ime ụlọ okpomọkụ, yana etiti ebili mmiri infrared super lattice lasers, ngwaọrụ etiti infrared LED dị iche iche maka oke ikuku 2-14 μm ya.Ọzọkwa, InAs bụ ezigbo mkpụrụ maka ịkwado InGaAs dị iche iche, InAsSb, InAsPSb & InNAsSb ma ọ bụ AlGaSb super lattice structure wdg.

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Indium Arsenide

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Indium Arsenide Crystal Waferbụ nnukwu mkpụrụ maka ịme ngwaọrụ Halllọ Nzukọ na ihe mmetụta ndọta magnetik maka ngagharị ụlọ ya kachasị elu mana bandgap ike dị warara, ihe dị mma maka nrụpụta ihe nchọta infrared nke nwere ogologo ogologo nke 1-3.8 µm ejiri na ngwa ike dị elu na ụlọ okpomọkụ, yana etiti ebili mmiri infrared super lattice lasers, nrụpụta ngwaọrụ LED infrared nke etiti maka oke ogologo ogologo 2-14 μm ya.Ọzọkwa, InAs bụ ihe dị mma maka ịkwado InGaAs dị iche iche, InAsSb, InAsPSb & InNAsSb ma ọ bụ AlGaSb super lattice Ọdịdị wdg.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Nha	2"	3"	4"
2	Dayameta mm	50.5±0.5	76.2 ± 0.5	100±0.5
3	Uzo uto	LEC	LEC	LEC
4	Omume omume	Ụdị P-ụdị/Zn-doped, N-ụdị/S-doped, Un-doped
5	Nhazi	(100)±0.5°, (111)±0.5°
6	Ọkpụrụkpụ μm	500± 25	600± 25	800± 25
7	Nhazi Flat mm	16±2	22±2	32±2
8	Nchọpụta Flat mm	8±1	11 ± 1	18±1
9	Mbugharị cm2/Vs	60-300, ≥2000 ma ọ bụ dị ka achọrọ
10	Ntụnye ihe nleba anya cm-3	(3-80) E17 ma ọ bụ ≤5E16
11	TTV μm max	10	10	10
12	Ụta μm max	10	10	10
13	Warp μm max	15	15	15
14	Njupụta njupụta cm-2 max	1000	2000	5000
15	Emecha elu elu	P/E, P/P	P/E, P/P	P/E, P/P
16	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa Aluminom.

Usoro usoro	N'A
Ibu molekụla	189.74
Ọdịdị kristal	Zinc ngwakọta
Ọdịdị	Gray crystalline siri ike
Ebe Na-agbaze	(936-942)°C
Ebe esi nri	N/A
Njupụta na 300K	5.67 g/cm³
Oghere ike	0.354 eV
Resistivity dị n'ime	0.16 Ω-cm
Nọmba CAS	1303-11-3
Nọmba EC	215-115-3

Indium Arsenide InAsna Western Minmetals (SC) Corporation nwere ike ịnye ya dị ka polycrystalline akpụ ma ọ bụ otu kristal dị ka ịkpụ, etched, polished, ma ọ bụ epi-njikere wafers n'ogo nke 2" 3" na 4" (50mm, 75mm,100mm) dayameta, na p-ụdị, n-ụdị ma ọ bụ un-doped conductivity na <111> ma ọ bụ <100> nghazi.Nkọwapụta ahaziri ahaziri bụ maka ngwọta zuru oke nye ndị ahịa anyị n'ụwa niile.