Indium Antimonide InSb

Nkọwa

IAntimonide InSb, semiconductor nke otu III-V crystalline ogige na zinc-blende lattice Ọdịdị, na-synthesized site 6N 7N elu ịdị ọcha Indium na antimony ọcha, na toro otu crystal site VGF usoro ma ọ bụ Liquid Encapsulated Czochralski LEC usoro si multiple zone nụchara anụcha polycrystalline ingot, nke enwere ike ịkpụ ma kewaa ya na wafer na ngọngọ ma emesịa.InSb bụ semiconductor mgbanwe ozugbo nwere oghere dị warara nke 0.17eV na ụlọ okpomọkụ, mmetụta dị elu na 1-5μm wavelength na ultra high hall mobility.Indium Antimonide InSb n-ụdị, p-ụdị na ọkara insulating conductivity na Western Minmetals (SC) Corporation nwere ike ịnye na nha nke 1 ″ 2″ 3″ na 4” (30mm, 50mm, 75mm, 100mm) dayameta, nghazi < 111> ma ọ bụ <100>, na na-eji wafer n'elu imecha dị ka-ebipụ, lapped, etched na-egbu maramara.Indium Antimonide InSb lekwasịrị anya nke Dia.50-80mm nwere ụdị n-enweghị doped dịkwa.Ka ọ dị ugbu a, a na-ahazikwa polycrystalline indium antimonide InSb ( multicrystal InSb) nke nwere nha na-adịghị ahụkebe, ma ọ bụ oghere (15-40) x (40-80) mm, na ogwe okirikiri nke D30-80mm mgbe a rịọrọ maka ngwọta zuru oke.

Ngwa

Indium Antimonide InSb bụ otu mkpụrụ dị mma maka mmepụta nke ọtụtụ akụrụngwa na ngwaọrụ ọgbara ọhụrụ, dị ka ihe onyonyo onyonyo dị elu, sistemu FLIR, ihe ụlọ nzukọ na ihe mmetụta magnetoresistance, sistemu ntụzịaka ngwa ọgụ infrared homing, ihe mmetụta infrared na-anabata nke ukwuu. , ihe ndọta dị elu na rotary resistivity sensọ, arrays planar focal, yana emegharịrị dị ka isi iyi radieshon terahertz yana na teliskop infrared mbara igwe wdg.

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Indium Antimonide

InSb

Indium Antimonide Substrate(InSb Substrate, InSb Wafer) n-ụdị ma ọ bụ p-ụdị na Western Minmetals (SC) Corporation nwere ike inye na nha nke 1" 2" 3" na 4" (30, 50, 75 na 100mm) dayameta, nghazi <111> ma ọ bụ <100>, na Enwere ike ịnye Indium Antimonide Single Crystal bar (InSb Monocrystal bar) ma ọ bụrụ na achọrọ ya.

Indium AntimonidePA na-ahazikwa olycrystalline (InSb Polycrystalline, ma ọ bụ multicrystal InSb) nke nwere nha na-adịghị mma, ma ọ bụ oghere (15-40) x (40-80) mm ma rịọ maka ngwọta zuru oke.

Ka ọ dị ugbu a, Indium Antimonide Target (InSb Target) nke Dia.50-80mm nwere ụdị n-enweghị doped dịkwa.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Indium Antimonide Substrate	2"	3"	4"
2	Dayameta mm	50.5±0.5	76.2 ± 0.5	100±0.5
3	Uzo uto	LEC	LEC	LEC
4	Omume omume	P-ụdị/Zn,Ge doped, N-ụdị/Te-doped, Un-doped
5	Nhazi	(100)±0.5°, (111)±0.5°
6	Ọkpụrụkpụ μm	500± 25	600± 25	800± 25
7	Nhazi Flat mm	16±2	22±1	32.5±1
8	Nchọpụta Flat mm	8±1	11 ± 1	18±1
9	Mbugharị cm2/Vs	1-7E5 N/un-doped, 3E5-2E4 N/Te-doped, 8-0.6E3 ma ọ bụ ≤8E13 P/Ge-doped
10	Ntụnye ihe nleba anya cm-3	6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 ma ọ bụ <1E14 P/Ge-doped
11	TTV μm max	15	15	15
12	Ụta μm max	15	15	15
13	Warp μm max	20	20	20
14	Njupụta njupụta cm-2 max	50	50	50
15	Emecha elu elu	P/E, P/P	P/E, P/P	P/E, P/P
16	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa Aluminom.

Mba.	Ihe	Nkọwa ọkọlọtọ
Mba.	Ihe	IAntimonide Polycrystalline	Indium Antimonide Target
1	Omume omume	Edochiri	Edochiri
2	Ihe nleba anya nke ụgbọelu cm^-3	6E13-3E14	1.9-2.1E16
3	Mbugharị cm²/Vs	5-7E5	6.9-7.9E4
4	Nha	15-40x40-80 mm	D (50-80) mm
5	Nkwakọ ngwaahịa	Na akpa aluminom mejupụtara, igbe katọn n'èzí

Usoro usoro	InSb
Ibu molekụla	236.58
Ọdịdị kristal	Zinc ngwakọta
Ọdịdị	kristal ọla edo gbara ọchịchịrị
Ebe Na-agbaze	527 Celsius C
Ebe esi nri	N/A
Njupụta na 300K	5.78 g/cm³
Oghere ike	0.17 eV
Resistivity dị n'ime	4E(-3) Ω-cm
Nọmba CAS	1312-41-0
Nọmba EC	215-192-3

Indium Antimonide InSbwafer bụ otu ezigbo mkpụrụ maka mmepụta nke ọtụtụ akụrụngwa na ngwaọrụ ọgbara ọhụrụ, dị ka ihe onyonyo onyonyo dị elu, sistemu FLIR, ihe ụlọ nzukọ na ihe mmetụta magnetoresistance, sistemu ntụzịaka ngwa ọgụ infrared homing, ihe mmetụta infrared na-anabata nke ọma, ihe mmetụta fotodetector dị elu. -nkenke magnetik na rotary resistivity sensọ, ebe a na-eme atụmatụ atụmatụ, yana emegharịrị dị ka isi iyi rahertz na teliskop infrared mbara igwe wdg.