Gallium Nitride GaN

Nkọwa

Gallium Nitride GaN, CAS 25617-97-4, molecular uka 83.73, wurtzite crystal Ọdịdị, bụ ọnụọgụ abụọ compound kpọmkwem band-ọpụ semiconductor nke otu III-V toro site a ukwuu mepụtara ammonothermal usoro usoro.Ejiri njirimara kristal zuru oke, nrụpụta ọkụ dị elu, ngagharị elektrọn dị elu, mpaghara eletrik dị oke egwu na bandgap sara mbara, Gallium Nitride GaN nwere njirimara a na-achọsi ike na optoelectronics na ngwa nghọta.

Ngwa

Gallium Nitride GaN dabara maka mmepụta nke oke oke ọsọ na ikike dị elu na-enwu ọkụ na-emitting diodes LEDs components, laser na optoelectronics dị ka akwụkwọ ndụ akwụkwọ ndụ na-acha anụnụ anụnụ, ngwaahịa transistor elektrọn dị elu (HEMTs) yana ike dị elu. na ụlọ ọrụ nrụpụta ngwaọrụ dị elu.

Nnyefe

Enwere ike ịnye Gallium Nitride GaN na Western Minmetals (SC) Corporation n'ogo nke okirikiri wafer 2 inch ma ọ bụ 4 ”(50mm, 100mm) na wafer square 10 × 10 ma ọ bụ 10 × 5 mm.Ọ bụla ahaziri nha na nkọwapụta bụ maka zuru okè ngwọta na anyị ahịa n'ụwa nile.

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Gallium Nitride GaN

Gallium Nitride GaNna Western Minmetals (SC) Corporation nwere ike inye na size nke okirikiri wafer 2 inch "ma ọ bụ 4" (50mm, 100mm) na square wafer 10 × 10 ma ọ bụ 10 × 5 mm.Ọ bụla ahaziri nha na nkọwapụta bụ maka zuru okè ngwọta na anyị ahịa n'ụwa nile.

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Ụdị	okirikiri	okirikiri	Square
2	Nha	2"	4"	--
3	Dayameta mm	50.8±0.5	100±0.5	--
4	Ogologo akụkụ mm	--	--	10x10 ma ọ bụ 10x5
5	Uzo uto	HVPE	HVPE	HVPE
6	Nhazi	Ụgbọ elu C (0001)	Ụgbọ elu C (0001)	Ụgbọ elu C (0001)
7	Ụdị omume	N-ụdị/Si-doped, Un-doped, Semi-insulating
8	Nguzogide Ω-cm	<0.1, <0.05,>1E6
9	Ọkpụrụkpụ μm	350± 25	350± 25	350± 25
10	TTV μm max	15	15	15
11	Ụta μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Emecha elu elu	P/E, P/P	P/E, P/P	P/E, P/P
14	Ọdịdị dị n'elu	N'ihu: ≤0.2nm, Azụ: 0.5-1.5μm ma ọ bụ ≤0.2nm
15	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa Aluminom.

Usoro usoro	GaN
Ibu molekụla	83.73
Ọdịdị kristal	Zinc blende/Wurtzite
Ọdịdị	siri ike translucent
Ebe Na-agbaze	2500 Celsius C
Ebe esi nri	N/A
Njupụta na 300K	6.15 g/cm³
Oghere ike	(3.2-3.29) eV na 300K
Resistivity dị n'ime	> 1E8 Ω-cm
Nọmba CAS	25617-97-4
Nọmba EC	247-129-0

Gallium Nitride GaNdabara adaba maka mmepụta nke oke ọnụ dị elu na ikike dị elu na-egbuke egbuke-emitting diodes LEDs components, laser na optoelectronics dị ka akwụkwọ ndụ akwụkwọ ndụ na-acha anụnụ anụnụ lasers, elu electron mobility transistors (HEMTs) ngwaahịa na na elu-ike na elu- ụlọ ọrụ nrụpụta ngwaọrụ okpomọkụ.