Gallium Antimonide GaSb

Nkọwa

Gallium Antimonide GaSb, a semiconductor nke otu III-V ogige na zinc-blende lattice Ọdịdị, na-synthesized site 6N 7N elu ịdị ọcha gallium na antimony ọcha, na toro kristal site LEC usoro si directionally oyi kpọnwụrụ polycrystalline ingot ma ọ bụ VGF usoro na EPD <1000cm^-3.Enwere ike ịkụnye wafer GaSb n'ime wee mepụta ya site na otu kristal ingot nwere oke nha nha eletrik, ihe dị iche iche na nke lattice mgbe niile, yana njupụta ntụpọ dị ala, index refractive kacha elu karịa ogige ndị ọzọ na-abụghị ọla.Enwere ike ịhazi GaSb na nhọrọ sara mbara n'ụzọ ziri ezi ma ọ bụ gbanyụọ, itinye uche doped dị ala ma ọ bụ dị elu, imecha elu dị mma yana maka MBE ma ọ bụ MOCVD epitaxial growth.A na-eji mkpụrụ osisi Gallium Antimonide mee ihe na ngwa foto-optic na optoelectronic kachasị mma dị ka imepụta ihe nchọpụta foto, ihe nchọpụta infrared nwere ogologo ndụ, ọgụgụ isi na ntụkwasị obi dị elu, akụrụngwa photoresist, LED infrared na lasers, transistors, thermal photovoltaic cell. na usoro thermo-photovoltaic.

Nnyefe

Enwere ike ịnye Gallium Antimonide GaSb na Western Minmetals (SC) Corporation na ụdị n-ụdị, p-ụdị na undoped semi-insulating conductivity na nha nke 2" 3" na 4" (50mm, 75mm, 100mm) dayameta, nghazi <111> ma ọ bụ <100>, na na wafer n'elu imecha nke as-cut, etched, polished ma ọ bụ elu àgwà epitaxy njikere agwụ.Mpekere niile ka edebere laser n'otu n'otu maka njirimara.Ka ọ dị ugbu a, a na-ahazi akpụ polycrystalline gallium antimonide GaSb mgbe a rịọrọ ka ọ nweta ngwọta zuru oke.

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Gallium Antimonide

GaSb

Gallium Antimonide GaSbA na-eji mkpụrụ osisi eme ihe na ngwa foto-optic na optoelectronic kachasị mma dị ka ihe nrụpụta foto, ndị na-achọpụta infrared nwere ogologo ndụ, uche dị elu na ntụkwasị obi, akụrụngwa photoresist, LEDs infrared na lasers, transistors, thermal photovoltaic cell na thermal photovoltaic cell. - fotovoltaic usoro.

	Ihe	Nkọwa ọkọlọtọ
1	Nha	2"	3"	4"
2	Dayameta mm	50.5±0.5	76.2 ± 0.5	100±0.5
3	Uzo uto	LEC	LEC	LEC
4	Omume omume	Ụdị P-ụdị/Zn-doped, Un-doped, N-ụdị/Te-doped
5	Nhazi	(100)±0.5°, (111)±0.5°
6	Ọkpụrụkpụ μm	500± 25	600± 25	800± 25
7	Nhazi Flat mm	16±2	22±1	32.5±1
8	Nchọpụta Flat mm	8±1	11 ± 1	18±1
9	Mbugharị cm2/Vs	200-3500 ma ọ bụ dị ka achọrọ
10	Ntụnye ihe nleba anya cm-3	(1-100) E17 ma ọ bụ dị ka achọrọ
11	TTV μm max	15	15	15
12	Ụta μm max	15	15	15
13	Warp μm max	20	20	20
14	Njupụta njupụta cm-2 max	500	1000	2000
15	Emecha elu elu	P/E, P/P	P/E, P/P	P/E, P/P
16	Nkwakọ ngwaahịa	Otu akpa wafer agbachiri n'ime akpa Aluminom.

Usoro usoro	GaSb
Ibu molekụla	191.48
Ọdịdị kristal	Zinc ngwakọta
Ọdịdị	Gray crystalline siri ike
Ebe Na-agbaze	710°C
Ebe esi nri	N/A
Njupụta na 300K	5.61g/cm³
Oghere ike	0.726 eV
Resistivity dị n'ime	1E3 Ω-cm
Nọmba CAS	12064-03-8
Nọmba EC	235-058-8

Gallium Antimonide GaSbna Western Minmetals (SC) Corporation nwere ike inye ya na n-ụdị, p-ụdị na undoped ọkara insulating conductivity na nha nke 2" 3" na 4" (50mm, 75mm, 100mm) dayameta, nghazi <111> ma ọ bụ <100 >, na nke a na-emecha n'elu wafer nke as-cut, etched, polished ma ọ bụ elu mma epitaxy dị njikere imecha.Mpekere niile ka edebere laser n'otu n'otu maka njirimara.Ka ọ dị ugbu a, a na-ahazi akpụ polycrystalline gallium antimonide GaSb mgbe a rịọrọ ka ọ nweta ngwọta zuru oke.