Epitaxial (EPI) Silicon Wafer

Nkọwa

Epitaxial Silicon Waferma ọ bụ EPI Silicon Wafer, bụ wafer nke kristal semiconducting etinyere n'elu kristal a na-egbu maramara nke mkpụrụ silicon site na uto epitaxial.Okpokoro epitaxial nwere ike ịbụ otu ihe ahụ dị ka mkpụrụ site na uto epitaxial, ma ọ bụ oyi akwa nke nwere àgwà a na-achọsi ike site na uto epitaxial dị iche iche, nke na-anabata teknụzụ uto epitaxial gụnyere CVD vepor kemịkalụ, mmiri mmiri epitaxy LPE, yana molecular beam. Epitaxy MBE iji nweta ogo kachasị elu nke njupụta ntụpọ dị ala na ịdị mma elu.A na-eji Silicon Epitaxial Wafers eme ihe n'ụzọ bụ isi na mmepụta nke ngwaọrụ semiconductor dị elu, ihe mejupụtara semiconductor ICs nke ukwuu, ngwaọrụ pụrụ iche na ike, nke a na-ejikwa maka mmewere nke diode na transistor ma ọ bụ mkpụrụ maka IC dị ka ụdị bipolar, MOS na ngwaọrụ BiCMOS.Ọzọkwa, ọtụtụ oyi akwa epitaxial na nnukwu ihe nkiri EPI silicon wafers na-ejikarị na microelectronics, photonics na fotovoltaics ngwa.

Nnyefe

Epitaxial Silicon Wafers ma ọ bụ EPI Silicon Wafer na Western Minmetals (SC) Corporation nwere ike inye na nha 4, 5 na 6 inch (100mm, 125mm, 150mm dayameta), na nghazi <100>, <111>, epilayer resistivity nke <1ohm -cm ma ọ bụ ruo 150ohm-cm, na epilayer ọkpụrụkpụ nke <1um ma ọ bụ ruo 150um, iji mezuo ihe dị iche iche chọrọ na elu imecha nke etched ma ọ bụ LTO ọgwụgwọ, juru n'ọnụ na cassette na igbe igbe n'èzí, ma ọ bụ dị ka ahaziri nkọwapụta zuru okè ngwọta. .

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Epi Silicon Wafer

Epitaxial Silicon Wafersma ọ bụ EPI Silicon Wafer na Western Minmetals (SC) Corporation nwere ike ịnye na nha nke 4, 5 na 6 inch (100mm, 125mm, 150mm dayameta), na nghazi <100>, <111>, epilayer resistivity nke <1ohm-cm ma ọ bụ ruo 150ohm-cm, na epilayer ọkpụrụkpụ nke <1um ma ọ bụ ruo 150um, ka afọ ju dị iche iche chọrọ na elu imecha nke etched ma ọ bụ LTO ọgwụgwọ, juru n'ọnụ na cassette na katọn igbe n'èzí, ma ọ bụ dị ka ahaziri nkọwapụta zuru okè ngwọta.

Akara	Si
Nọmba Atọmic	14
Atọmk Ibu	28.09
Otu n'ime ihe	Metalloid
Otu, Oge, Mgbochi	14, 3, P
Ọdịdị kristal	diamond
Agba	Agba ntụ ntụ
Ebe Na-agbaze	1414°C, 1687.15 K
Ebe esi nri	3265°C, 3538.15 K
Njupụta na 300K	2.329 g/cm³
Resistivity dị n'ime	3.2E5 Ω-cm
Nọmba CAS	7440-21-3
Nọmba EC	231-130-8

Mba.	Ihe	Nkọwa ọkọlọtọ
1	Njirimara izugbe
1-1	Nha	4"	5"	6"
1-2	Dayameta mm	100±0.5	125±0.5	150±0.5
1-3	Nhazi	<100>, <111>	<100>, <111>	<100>, <111>
2	Njirimara Epitaxial Layer
2-1	Uzo uto	CVD	CVD	CVD
2-2	Ụdị omume	P ma ọ bụ P+, N/ ma ọ bụ N+	P ma ọ bụ P+, N/ ma ọ bụ N+	P ma ọ bụ P+, N/ ma ọ bụ N+
2-3	Ọkpụrụkpụ μm	2.5-120	2.5-120	2.5-120
2-4	Ịdị n'ịdị arọ	≤3%	≤3%	≤3%
2-5	Nguzogide Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Nkwekọrịta nguzogide	≤3%	≤5%	-
2-7	Mwepu cm-2	<10	<10	<10
2-8	Ogo elu	Ọ dịghị mgbawa, haze ma ọ bụ oroma bee, wdg.
3	Jikwaa njirimara mkpụrụ osisi
3-1	Uzo uto	CZ	CZ	CZ
3-2	Ụdị omume	P/N	P/N	P/N
3-3	Ọkpụrụkpụ μm	525-675	525-675	525-675
3-4	Ọkpụrụkpụ Uniformity max	3%	3%	3%
3-5	Nguzogide Ω-cm	Dị ka achọrọ	Dị ka achọrọ	Dị ka achọrọ
3-6	Nkwekọrịta nguzogide	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Ụta μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Profaịlụ Edge	Gburugburu	Gburugburu	Gburugburu
3-12	Ogo elu	Ọ dịghị mgbawa, haze ma ọ bụ oroma bee, wdg.
3-13	Mmecha akụkụ azụ	Etched ma ọ bụ LTO (5000± 500Å)
4	Nkwakọ ngwaahịa	Cassette n'ime, igbe katọn n'èzí.

Silicon Epitaxial WafersA na-ejikarị emepụta ngwaọrụ semiconductor dị elu, ihe mejupụtara semiconductor ICs, ngwaọrụ pụrụ iche na ike, nke a na-ejikwa maka mmewere nke diode na transistor ma ọ bụ mkpụrụ maka IC dị ka ụdị bipolar, MOS na ngwaọrụ BiCMOS.Ọzọkwa, ọtụtụ oyi akwa epitaxial na nnukwu ihe nkiri EPI silicon wafers na-ejikarị na microelectronics, photonics na fotovoltaics ngwa.